PS3110-S10

PS3110 Controller

Beyond Your Expectaction

PS3110 is designed to achieve top tier SSD performance. Sequential data transfer rate up to 550 MB/ sec with 100K random read IOPS and 90K random write IOPS can ideally fit in every high performance application. PS3110 provides improved performance to optimize your user experience.


3 CPUs dedicated for flash management in order to achieve a sustained performance even when disk space is low. The smaller the swing; the lower the command latency.

 


There is a risk of losing data through every data transition process. PS3110 implements this enterprise feature to protect the entire data path within SSD utilizing CRC/ECC.







  • Designed to fight against internal soft errors between SRAMs.
  • Error detection/correction between Controller and DRAM.
  • Error detection/correction between Controller and NAND flash.


Errors are unavoidable with advanced flash processing. It is why data reconstruction becomes necessary for enterprise applications nowadays.

Smart ECC™ is new RAID ECC technology to recover uncorrectable errors. When a page is found faulty and flash ECC protection fails to recover the uncorrectable errors, the defective page will be reconstructed by our Smart ECC™ engine.



This Advanced Encryption Standard (AES) hardware protects your data by on-the-fly data encryption without sacrificing performance. To truly experience the advantages that Phison AES SSD can offer to user, Phison has developed TCG Security App. Now AES configuration is easy and user friendly!

 

 

简介:          
Phison PS3110 是一颗搭载四核心的SATA-to-Flash微控制IC,乃特别为SATA module 与嵌入式NAND应用所设计。最多可支援8通道与32CE NAND快闪记忆体,随机4k 读取更高达100,000 IOPS。透过对TLC NAND Flash的支援,可说是大容量储存装置应用的最佳选择。

重点规格:           
 符合SATA 3.2規範
 支持SATA I/II/III 1.5G/3G/6Gbps介面
 支持2Gb/4Gb/8Gb DDR III Cache
 內建enhanced up to 120bit/2KB ECC circuit (BCH)
 Program RAM (韧体可更新)

特色:          
 采用55奈米CMOS製程
 采用521-pin FBGA封裝方式
 适用電壓:0.9V ~ 3.6V
 內建支援3.3V/1.8V闪存I/O界面的调节器

NAND闪存支援:        
 支援1x/1y奈米
 支援interleave, 4-plane與8-channel Flash access
 支援MLC/TLC large block (8k/16k page) NAND闪存
 MLC NAND 连续性读/写速度可达550/530 MB/s, 4K随机读/写IOPS可达100K/90K

其他:          
 内建静态与动态wear-leveling
 省电模式
 End-to-End Data Path Protection