Beyond Your Expectaction
PS3110 is designed to achieve top tier SSD performance. Sequential data transfer rate up to 550 MB/ sec with 100K random read IOPS and 90K random write IOPS can ideally fit in every high performance application. PS3110 provides improved performance to optimize your user experience.
3 CPUs dedicated for flash management in order to achieve a sustained performance even when disk space is low. The smaller the swing; the lower the command latency.
There is a risk of losing data through every data transition process. PS3110 implements this enterprise feature to protect the entire data path within SSD utilizing CRC/ECC.
- Designed to fight against internal soft errors between SRAMs.
- Error detection/correction between Controller and DRAM.
- Error detection/correction between Controller and NAND flash.
Errors are unavoidable with advanced flash processing. It is why data reconstruction becomes necessary for enterprise applications nowadays.
Smart ECC™ is new RAID ECC technology to recover uncorrectable errors. When a page is found faulty and flash ECC protection fails to recover the uncorrectable errors, the defective page will be reconstructed by our Smart ECC™ engine.
This Advanced Encryption Standard (AES) hardware protects your data by on-the-fly data encryption without sacrificing performance. To truly experience the advantages that Phison AES SSD can offer to user, Phison has developed TCG Security App. Now AES configuration is easy and user friendly!
Phison PS3110 is a quad-core SATA-to-Flash micro-controller specially designed for various types of SATA module and embedded NAND applications. Supporting up to 8-channels and 32 CE in its NAND Flash interface, it is possible to achieve up to 100,000 IOPS. It also counts with support to TLC NAND Flash which makes PS3110 ideal to reach high storage capacities.
Compatible with SATA specification Version 3.2
Compatible with SATA I/II/III 1.5Gbps, 3Gbps, and 6Gbps interface
Configurable with 2Gb/4Gb/8Gb DDRIII Cache
Built-in enhanced up to 120bit/2KB ECC circuit (BCH)
Program RAM (Program Upgradable)
Fabricated in 55 nm CMOS process
Available in 521-pin FBGA package
Operating Voltage : 0.9V~3.6V
Built-in Regulator that supports 3.3V/1.8V Flash I/O
NAND Flash Support
Supports 1x/1ynm flash
Supports interleave, 4-plane and 8-channel Flash access
Supports MLC/TLC large block (8k/16k page) NAND Flash Memory
MLC R/W speed up to 550/530 MB/s for sequential performance and 100K/90K Random IOPS.
Built-in static and dynamic wear-leveling
Power saving implemented
End-to-End Data Path Protection